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ESD Protection Exceeds 2000 V
GENERAL DESCRIPTION
The WS57C51C is a High Performance 128K UV Erasable Electrically Re-Programmable Read Only Memory
(RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM
speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the
WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the
entire memory array to be tested for switching characteristics and functionality after assembly. Unlike devices which
cannot be erased, every WS5751C in a windowed package is 100% tested with worst case test patterns both
before and after assembly.
The WS57C51C provides a low power alternative to those designs which are committed to a Bipolar PROM
footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software,
hardware or layout changes need be performed.
MODE SELECTION
PINS CS1/
VPP
MODE
Read
Output
Disable
Output
Disable
Output
Disable
Output
Disable
Program
Program
Verify
VIL
VIH
X
X
X
VPP
VIL
CS2
VIL
X
VIH
X
X
VIH
VIL
CS3
VIH
X
X
VIL
X
X
VIH
CS4
VIL
X
X
X
VIH
X
VIL
VCC
VCC
VCC
VCC
VCC
VCC
VCC
VCC
OUTPUTS
PIN CONFIGURATION
TOP VIEW
Chip Carrier
DOUT
High Z
High Z
High Z
High Z
DIN
DOUT
A
5
A
4
A
3
A
2
A
1
A
0
NC
O
0
O
1
A
6
A
7
A
8
A
9
V
CC
A
10
A
11
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
CERDIP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
A10
A11
A12
A13
CS1/VPP
CS2
CS3
CS4
O
7
O
6
O
5
O
4
O
3
4 3 2
32 31 30
1
5
29
6
28
7
27
8
26
9
25
10
24
11
23
12
22
13
21
14 15 16 17 18 19 20
O
2
NC
GND
A
12
A
13
CS1/V
PP
CS2
CS3
CS4
NC
O
7
O
6
O
3
NC O
4
O
5
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
CS to Output Valid Time (Max)
WS57C51C-45
45 ns
20 ns
WS57C51C-55
55 ns
25 ns
WS57C51C-70
70 ns
30 ns
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STMICROELECTRONICS
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