鈥?/div>
EPI Processing
鈥?Latch-up Immunity Up to 200 mA
GENERAL DESCRIPTION
The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is
manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming
only 90 mA.
Two major features of the WS57C128FB are its Low Power and High Speed. These features make it an ideal
solution for applications which require fast access times, low power, and non-volatility. Typical applications include
systems which do not utilize mass storage devices and/or are board space limited.
The WS57C128FB is configured in the standard EPROM pinout which provides an easy upgrade path for systems
which are currently using standard EPROMs. The EPROMs are available in both 600 Mil DIP packages, and both
J-leaded and leadless surface mount packages.
MODE SELECTION
PINS
MODE
Read
Output
Disable
Standby
Program
Program
Verify
Program
Inhibit
PGM
X
X
X
VIL
VIH
X
CE
VIL
X
VIH
VIL
VIL
VIH
OE
VIL
VIH
X
VIH
VIL
X
VPP
VCC
VCC
VCC
VPP
VPP
VPP
VCC OUTPUTS
PIN CONFIGURATION
TOP VIEW
Chip Carrier
VCC
VCC
VCC
VCC
VCC
High Z
High Z
DIN
DOUT
High Z
A
6
A
5
A
4
A
3
A
2
A
1
A
0
NC
O
0
A
7
A
12
V
PP
NC
V
CC
PGM
A
13
CERDIP
V
PP
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
PGM
A13
A8
A9
A11
OE
A10
CE
O
7
O
6
O
5
O
4
O
3
VCC
DOUT
X can be VIL or VIH.
4 3 2
32 31 30
1
5
29
6
28
7
27
8
26
9
25
10
24
11
23
12
22
13
21
14 15 16 17 18 19 20
O
1
O
2
GND
A
8
A
9
A
11
NC
OE
A
10
CE
O
7
O
6
NC O
3
O
4
O
5
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
Chip Select Time (Max)
Output Enable Time (Max)
WS57C128FB-35
35 ns
35 ns
20 ns
WS57C128FB-45
45 ns
45 ns
25 ns
WS57C128FB-55
55 ns
55 ns
25 ns
WS57C128FB-70
70 ns
70 ns
25 ns
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