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WED9LC6416V2012BI Datasheet

  • WED9LC6416V2012BI

  • 128Kx32 SSRAM/4Mx32 SDRAM

  • 27頁

  • ETC

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WED9LC6416V
128Kx32 SSRAM/4Mx32 SDRAM
FEATURES
s
Clock speeds:
鈥?SSRAM: 200, 166,150, and 133 MHz
鈥?SDRAMs: 125 and 100 MHz
s
DSP Memory Solution
鈥?Texas Instruments TMS320C6201
鈥?Texas Instruments TMS320C6701
s
Packaging:
鈥?153 pin BGA, JEDEC MO-163
s
3.3V Operating supply voltage
s
Direct control interface to both the SSRAM and SDRAM ports
on the 鈥淐6x鈥?/div>
s
Common address and databus
s
65% space savings vs. monolithic solution
s
Reduced system inductance and capacitance
Advanced*
External Memory Solution for Texas Instruments TMS320C6000 DSP
DESCRIPTION
The WED9LC6416VxxBC is a 3.3V, 128K x 32 Synchronous
Pipeline SRAM and a 4Mx32 Synchronous DRAM array con-
structed with one 128K x 32 SBSRAM and two 4Mx16 SDRAM die
mounted on a multilayer laminate substrate. The device is
packaged in a 153 lead, 14mm by 22mm, BGA.
The WED9LC6416VxxBC provides a total memory solution for the
Texas Instruments TMS320C6201 and the TMS320C6701 DSPs
The Synchronous Pipeline SRAM is available with clock speeds
of 200, 166,150, and 133 MHz, allowing the user to develop a fast
external memory for the SSRAM interface port .
The SDRAM is available in clock speeds of 125 and 100 MHz,
allowing the user to develop a fast external memory for the
SDRAM interface port .
The WED9LC6416V is available in both commercial and industrial
temperature ranges.
* This data sheet describes a product that may or may not be under development and
is subject to change or cancellation without notice.
FIG. 1
1
A
B
C
D
E
F
G
H
J
L
M
N
P
R
T
U
PIN CONFIGURATION
TOP VIEW
2
DQ
23
DQ
22
V
CCQ
DQ
21
DQ
20
V
CCQ
NC
NC
A
7
NC
V
CCQ
DQ
11
DQ
10
V
CCQ
DQ
9
DQ
8
2
3
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
NC
A
8
A
9
NC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
3
4
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
BWE
2
BWE
0
V
SS
V
SS
V
SS
SSOE
4
5
V
SS
SDCE
V
SS
SDCLK
V
SS
V
SS
V
SS
V
SS
BWE
3
BWE
1
V
SS
SSCLK
V
SS
SSCE
5
6
V
SS
V
SS
NC
V
SS
V
SS
V
SS
V
SS
NC
NC
NC
NC
NC
V
SS
V
SS
V
SS
NC
NC
6
7
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
A
2
A
1
A
0
NC
NC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
7
8
DQ
24
DQ
25
V
CCQ
DQ
26
DQ
27
V
CCQ
A
4
A
3
A
11
A
13
A
15
V
CCQ
DQ
4
DQ
5
V
CCQ
DQ
6
DQ
7
8
9
DQ
28
DQ
29
V
CCQ
DQ
30
DQ
31
V
CCQ
A
5
A
10
A
12
A
14
A
16
V
CCQ
DQ
0
DQ
1
V
CCQ
DQ
2
DQ
3
9
V
SS
NC
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
SSCE
SDCE
V
CC
V
CCQ
PIN DESCRIPTION
A
0-16
DQ
0-31
SSCLK
SSADC
SSWE
SSOE
SDCLK
SDRAS
SDCAS
SDWE
SDA
10
BWE
0-3
Address Bus
Data Bus
SSRAM Clock
SSRAM Address Status Control
SSRAM Write Enable
SSRAM Output Enable
SDRAM Clock
SDRAM Row Address Strobe
SDRAM Column Address Strobe
SDRAM Write Enable
SDRAM Address 10/auto precharge
SSRAM Byte Write Enables
SDRAM SDQM 0 - 3
Chip Enable SSRAM Device
Chip Enable SDRAM Device
Power Supply pins, 3.3V
Data Bus Power Supply pins,
3.3V (2.5V future)
Ground
No Connect
DQ
19
DQ
18
V
CCQ
DQ
17
DQ
16
V
CCQ
NC
NC
A
6
NC
V
CCQ
DQ
12
DQ
13
V
CCQ
DQ
14
DQ
15
1
SDWE SDA
10
SDRAS SDCAS
K
NC / A
17
NC / A
18
NC / A
19
SSADC SSWE
January 20001
1
White Electronic Designs Corporation 鈥?(508) 366-5151 鈥?www.whiteedc.com

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