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W986416DH-55 Datasheet

  • W986416DH-55

  • SDRAM|4X1MX16|CMOS|TSOP|54PIN|PLASTIC

  • 46頁

  • ETC

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W986416DH
1M
脳
4 BANKS
脳
16 BITS SDRAM
GENERAL DESCRIPTION
W986416DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
1M words
脳
4 banks
脳
16 bits. Using pipelined architecture and 0.175
碌m
process technology,
W986416DH delivers a data bandwidth of up to 366M bytes per second (-55). For different application,
W986416DH is sorted into the following speed grades: 鈥?5, -6, -7. The -55 parts can run up to 183
MHz/CL3. The -6 parts can run up to 166 MHz/CL3. The -7 parts can run up to 143 MHz/CL3. For
handheld device application, we also provide a low power option, the grade of 鈥?L, with Self Refresh
Current under 400
碌A(chǔ)
and work well at 2.7V during Self Refresh Mode.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W986416DH is ideal for main memory in
high performance applications.
FEATURES
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3.3V
鹵0.3V
power supply
1048576 words
脳
4 banks
脳
16 bits organization
Self Refresh Current: Standard and Low Power
CAS latency: 2 and 3
Burst Length: 1, 2, 4, 8, and full page
Sequential and Interleave burst
Burst read, single write operation
Byte data controlled by DQM
Power-down Mode
Auto-precharge and controlled precharge
4K refresh cycles/64 mS
Interface: LVTTL
Packaged in TSOP II 54-pin, 400 mil - 0.80
AVAILABLE PART NUMBER
PART NUMBER
W986416DH-55
W986416DH-6
W986416DH-7
W986416DH-7L
SPEED (CL = 3)
183 MHz
166 MHz
143 MHz
143 MHz
SELF REFRESH
CURRENT (MAX.)
1 mA
1 mA
1 mA
400
碌A(chǔ)
POWER SUPPLY FOR
SELF REFRESH MODE
3.0V - 3.6V
3.0V - 3.6V
3.0V - 3.6V
2.7V - 3.6V
-1-
Publication Release Date: June 2001
Revision A2

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