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W963L6ABN80E Datasheet

  • W963L6ABN80E

  • 512K WORD X 16 BIT LOW POWER PSEUDO SRAM

  • 30頁

  • WINBOND

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W963L6ABN
512K WORD
脳
16 BIT LOW POWER PSEUDO SRAM
Table of Contents-
1. GENERAL DESCRIPTION.................................................................................................................. 3
2. FEATURES ......................................................................................................................................... 3
3. PRODUCT OPTIONS ......................................................................................................................... 3
4. BALL CONFIGURATION .................................................................................................................... 4
5. BALL DESCRIPTION .......................................................................................................................... 4
6. BLOCK DIAGRAM .............................................................................................................................. 5
7. FUNCTION TRUTH TABLE ................................................................................................................ 6
8. ELECTRICAL CHARACTERISTICS ................................................................................................... 7
Absolute Maximum Ratings .............................................................................................................. 7
Recommended Operating Conditions............................................................................................... 7
Capacitance ...................................................................................................................................... 8
DC Characteristics ............................................................................................................................ 8
AC Characteristics ............................................................................................................................ 9
Read Operation ..........................................................................................................................................9
Write Operation.........................................................................................................................................11
P
ower
D
own
and P
ower
D
own
P
rogram
P
arameters ............................................................................13
Other Timing Parameters .........................................................................................................................13
AC Test Conditions...................................................................................................................................13
9. TIMING WAVEFORMS ..................................................................................................................... 14
Read Timing #1 (
OE
Control Access)........................................................................................... 14
Read Timing #2 (
CE1
Control Access) ......................................................................................... 15
Read Timing #3 (Address Access after
OE
Control Access)....................................................... 16
Read Timing #4 (Address Access after
CE1
Control Access) ..................................................... 17
Write Timing #1 (
CE1
Control) ...................................................................................................... 18
Write Timing #2-1 (
WE
Control, Single Write Operation) ............................................................. 19
Write Timing #2 (
WE
Control, Continuous Write Operation)......................................................... 20
Read/Write Timing #1-1 (
CE1
Control) .......................................................................................... 21
Read/Write Timing #1-2 (
CE1
Control) .......................................................................................... 22
Publication Release Date: March 11, 2003
Revision A1
-1-

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