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W49F020-70 Datasheet

  • W49F020-70

  • 256K X 8 CMOS FLASH MEMORY

  • 21頁(yè)

  • WINBOND

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Preliminary W49F020
256K
脳
8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K
脳
8 bits. The device
can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is not
required. The unique cell architecture of the W49F020 results in fast program/erase operations with
extremely low current consumption (compared to other comparable 5-volt flash memory products). The
device can also be programmed and erased using standard EPROM programmers.
FEATURES
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Single 5-volt operations:
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5-volt Read
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5-volt Erase
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5-volt Program
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Low power consumption
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Active current: 25 mA (typ.)
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Standby current: 20
碌A(chǔ)
(typ.)
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Fast Program operation:
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Byte-by-Byte programming: 50
碌S
(max.)
Fast Erase operation: 100 mS (typ.)
Fast Read access time: 70/90 nS
Endurance: 1K/10K cycles (typ.)
Twenty-year data retention
Hardware data protection
One 8K byte Boot Block with Lockout
protection
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Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
鈭?/div>
Toggle bit
鈭?/div>
Data polling
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Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin DIP and 32-pin
TSOP and 32-pin-PLCC
-1-
Publication Release Date: October 1999
Revision A1

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