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W4501DW

Epitaxial Planer Transistor Silicon NPN

P b

Lead(Pb)-Free

1

4

5

6

3

2

1

6 5

4

2

3

Features:

* Both 2SC2412K Chip x 2 in a SOT-363

NPN+NPN

SOT-363(SC-88)

Maximum Ratings

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Symbol

VCEO

VCBO

VEBO

IC

Value

50

60

7

150

Unit

Vdc

Vdc

Vdc

mAdc

Thermal Characteristics

Characteristics

(1)

Symbol

PD

R

胃

JA

TJ,Tstg

Max

380

328

-55 to +150

Unit

mW

藲C/W

藲C

Total Device Dissipation T

A

=25藲C

Thermal Resistance, Junction to Ambient

Junction and Storage, Temperature

Device Marking

W4501DW=5H

Electrical Characteristics

Off Characteristics

(T

A

=25 C Unless Otherwise noted)

Symbol

Min

Max

Unit

Characteristics

Collector-Emitter Breakdown Voltage

(2)

(I

C

=1.0mAdc,I

B

=0)

Collector-Base Breakdown Voltage (I

C

=50 uAdc, I

E

=0)

Emitter-Base Breakdown Voltage (I

E

=50 uAdc, I

C

=0)

Emitter Cutoff Current (V

EB

=7.0Vdc)

Collector Cutoff Current (V

CB

=60Vdc)

1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.

2. Pulse Test:Pulse Width

<

300uS, Duty Cycle

<

2.0%

=

=

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

EBO

I

CBO

50

60

7.0

-

-

-

0.1

0.1

Vdc

Vdc

Vdc

碌A(chǔ)dc

碌A(chǔ)dc

-

-

http://www.weitron.com.tw

WEITRON

1/4

30-Nov-05

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• W4501DW
  英文版
  Epitaxial Planer Transistor Silicon NPN
  
  W4501DW
• W4501DW
  英文版
  Epitaxial Planer Transistor Silicon NPN
  WEITRON [W...
  W4501DW

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