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W29EE512Q-90B Datasheet

  • W29EE512Q-90B

  • 64K X 8 CMOS FLASH MEMORY

  • 22頁

  • WINBOND

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W29EE512
64K
8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K
8 bits. The device
can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is not
required. The unique cell architecture of the W29EE512 results in fast program/erase operations with
extremely low current consumption (compared to other comparable 5-volt flash memory products). The
device can also be programmed and erased using standard EPROM programmers.
FEATURES
鈥?/div>
Single 5-volt program and erase operations
鈥?/div>
Fast page-write operations
鈥?/div>
Low power consumption
鈭?/div>
Active current: 50 mA (max.)
鈭?/div>
Standby current: 100
碌A(chǔ)
(max.)
鈥?/div>
Automatic program timing with internal V
PP
鈭?/div>
128 bytes per page
鈭?/div>
Page program cycle: 10 mS (max.)
鈭?/div>
Effective byte-program cycle time: 39
碌S
鈭?/div>
Optional software-protected data write
鈥?/div>
Fast chip-erase operation: 50 mS
鈥?/div>
Read access time: 70/90/120 nS
鈥?/div>
Typical page program/erase cycles: 1K/10K
鈥?/div>
Ten-year data retention
鈥?/div>
Software and hardware data protection
generation
鈥?/div>
End of program detection
鈭?/div>
Toggle bit
鈭?/div>
Data polling
鈥?/div>
Latched address and data
鈥?/div>
TTL compatible I/O
鈥?/div>
JEDEC standard byte-wide pinouts
鈥?/div>
Available packages: 32-pin PLCC, TSOP and
VSOP
-1-
Publication Release Date: February 18, 2002
Revision A7

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