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W29EE011-90 Datasheet

  • W29EE011-90

  • 128K X 8 CMOS FLASH MEMORY

  • 20頁(yè)

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W29EE011
128K
脳
8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K
脳
8 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W29EE011 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
鈥?/div>
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Single 5-volt program and erase operations
Fast page-write operations
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128 bytes per page
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Page program cycle: 10 mS (max.)
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Effective byte-program cycle time: 39
碌S
鈭?/div>
Optional software-protected data write
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Low power consumption
鈭?/div>
Active current: 25 mA (typ.)
鈭?/div>
Standby current: 20
碌A(chǔ)
(typ.)
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鈥?/div>
Automatic program timing with internal V
PP
generation
End of program detection
鈭?/div>
Toggle bit
鈭?/div>
Data polling
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鈥?/div>
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Fast chip-erase operation: 50 mS
Read access time: 90/150 nS
Page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
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鈥?/div>
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鈥?/div>
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin 600 mil DIP,
TSOP, and PLCC
-1-
Publication Release Date: July 1999
Revision A12

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