W29C040
512K
脳
8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29C040 is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K
脳
8 bits.
The device can be written (erased and programmed) in-system with a standard 5V power supply. A
12-volt V
PP
is not required. The unique cell architecture of the W29C040 results in fast write (erase/
program) operations with extremely low current consumption compared to other comparable 5-volt
flash memory products. The device can also be written (erased and programmed) by using standard
EPROM programmers.
FEATURES
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Single 5-volt write (erase and program)
operations
Fast page-write operations
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256 bytes per page
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Page write (erase/program) cycle: 5 mS
(typ.)
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Effective byte-write (erase/program) cycle
time: 19.5
碌S
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Optional software-protected data write
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Software and hardware data protection
Low power consumption
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Active current: 25 mA (typ.)
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Standby current: 20
碌A(chǔ)
(typ.)
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Automatic write (erase/program) timing with
internal V
PP
generation
End of write (erase/program) detection
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Toggle bit
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Data polling
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Fast chip-erase operation: 50 mS
Two 16 KB boot blocks with lockout
Typical page write (erase/program) cycles:
1K/10K (typ.)
Read access time: 90/120 nS
Ten-year data retention
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Latched address and data
All inputs and outputs directly TTL compatible
JEDEC standard byte-wide pinouts
Available packages: TSOP and PLCC
-1-
Publication Release Date: May 1999
Revision A5
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