Advanced Technical Information
VUB 116 / 145
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
10+11 12
13
19+20
V
RRM
= 1600 V
I
dAVM
= 116/145 A
V
RRM
V
1600
1600
Type
1
6+7
4+5
2+3
VUB 116-16 NO1
VUB 145-16 NO1
8+9
18 17 21+22
Symbol
V
RRM
I
dAVM
I
FSM
I
2
t
P
tot
V
CES
V
GE
IGBT
Conditions
Maximum Ratings
VUB 116
VUB 145
Features
V
A
A
A
A
A
W
V
V
A
A
A
W
V
A
A
A
A
W
擄C
擄C
擄C
V~
V~
Nm
lb.in.
mm
mm
m/s
2
g
Dimensions in mm (1 mm = 0.0394")
鈥?Soldering connections for PCB mounting
鈥?Convenient package outline
鈥?Thermistor
Applications
鈥?Drive Inverters with brake system
Advantages
鈥?2 functions in one package
鈥?Easy to mount with two screws
鈥?Suitable for wave soldering
鈥?High temperature and power cycling
capability
1600
Rectifier Diodes
1600
T
C
= 100擄C, sinusoidal 120擄
T
VJ
= 45擄C, t = 10 ms, V
R
= 0 V
T
VJ
= 150擄C, t = 10 ms, V
R
= 0 V
T
VJ
= 45擄C, t = 10 ms, V
R
= 0 V
T
VJ
= 150擄C, t = 10 ms, V
R
= 0 V
T
C
= 25擄C per diode
T
VJ
= 25擄C to 150擄C
Continuous
T
C
= 25擄C, DC
T
C
= 80擄C, DC
t
p
= Pulse width limited by T
VJM
T
C
= 25擄C
116
650
570
2110
1620
190
1200
鹵
20
95
67
100
380
1200
27
38
tbd
200
130
-40...+150
150
-40...+125
145
900
780
4050
3040
250
1200
鹵
20
141
100
150
570
I
C25
I
C80
I
CM
P
tot
V
RRM
I
FAV
I
FRMS
I
FRM
I
FSM
P
tot
T
VJ
T
VJM
T
stg
V
ISOL
M
d
d
S
d
A
a
Weight
Fast Recovery Diode
T
C
= 80擄C, rectangular d = 0.5
T
C
= 80擄C, rectangular d = 0.5
T
C
= 80擄C, t
P
= 10 碌s, f = 5 kHz
T
VJ
= 45擄C, t = 10 ms
T
C
= 25擄C
Module
50/60 Hz, t = 1 min
I
ISOL
鈮?/div>
1 mA, t = 1 s
Mounting torque
Creep distance on surface
Strike distance in air
Maximum allowable acceleration
typ.
2500
3000
2.25...2.75
20...25
12.7
9.6
50
180
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2002 IXYS All rights reserved
1-2
240
Data according to IEC 60747
IXYS
1
2
