GaAs Infrared Emitting Diodes
Long T-1 Plastic Package 鈥?940 nm
VTE3322LA, 24LA
PACKAGE DIMENSIONS
inch (mm)
DESCRIPTION
CASE 50A LONG T-1
CHIP SIZE: .011" X .011"
This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.
ABSOLUTE MAXIMUM RATINGS @ 25擄C
(unless otherwise noted)
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30擄C:
Maximum Continuous Current:
Derate above 30擄C:
Peak Forward Current, 10 碌s, 100 pps:
Temp. Coefficient of Power Output (Typ.):
Maximum Reverse Voltage:
-40擄C to 100擄C
100 mW
1.43 mW/擄C
50 mA
0.71 mA/擄C
3A
-.8%/擄C
5.0V
Maximum Reverse Current @ V
R
= 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I
F
= 20 mA
Rise:1.0 碌s Fall: 1.0 碌s
Lead Soldering Temperature:
10 碌A(chǔ)
940 nm
14 pF
260擄C
(1.6 mm from case, 5 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also GaAlAs curves, pages 123-124)
Output
Irradiance
Part Number
E
e
mW/cm
2
Min.
VTE3322LA
VTE3324LA
1.0
2.0
Typ.
1.3
2.6
Condition
distance
mm
10.16
10.16
Diameter
mm
2.1
2.1
Radiant
Intensity
I
e
mW/sr
Min.
1.0
2.0
Total Power
P
O
mW
Typ.
1.5
2.5
Test
Current
I
FT
mA
(Pulsed)
20
20
Forward Drop
V
F
@ I
FT
Volts
Typ.
Typ.
1.25
1.25
Max.
1.6
1.6
鹵10擄
鹵10擄
Half Power Beam
Angle
胃
1/2
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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