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VNQ830M13TR Datasheet

  • VNQ830M13TR

  • QUAD CHANNEL HIGH SIDE DRIVER

  • 20頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
VNQ830M
QUAD CHANNEL HIGH SIDE DRIVER
TYPE
VNQ830M
(*) Per each channel
R
DS(on)
60 m鈩?(*)
I
OUT
6 A (*)
V
CC
36 V
CMOS COMPATIBLE INPUTS
s
OPEN DRAIN STATUS OUTPUTS
s
ON STATE OPEN LOAD DETECTION
s
OFF STATE OPEN LOAD DETECTION
s
SHORTED LOAD PROTECTION
s
UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
s
LOSS OF GROUND PROTECTION
s
VERY LOW STAND-BY CURRENT
s
s
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE
TUBE
VNQ830M
T&R
VNQ830M13TR
SO-28
REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ830M is a quad HSD formed by
assembling two VND830M chips in the same SO-
28 package. The VND830M is a monolithic device
made by using| STMicroelectronics VIPower M0-
3 Technology. The VNQ830M is intended for
driving any type of multiple loads with one side
connected to ground.
Active V
CC
pin voltage clamp protects the device
ABSOLUTE MAXIMUM RATING
Symbol
V
CC
- V
CC
- I
GND
I
OUT
- I
OUT
I
IN
I
STAT
Parameter
against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protects the device against overload.
The device detects open load condition both in on
and off state. The openload threshold is aimed at
detecting the 5W/12V standard bulb as an
openload fault in the on state. Output shorted to
V
CC
is detected in the off state. Device
automatically turns off in case of ground pin
disconnection.
DC Supply Voltage
Reverse DC Supply Voltage
DC Reverse Ground Pin Current
DC Output Current
Reverse DC Output Current
DC Input Current
DC Status Current
Electrostatic Discharge (Human Body Model: R=1.5K鈩? C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
Power Dissipation T
pins
=25擄C
Maximum Switching Energy
(L=1mH; R
L
=0鈩? V
bat
=13.5V; T
jstart
=150潞C; I
L
=10.5A)
Junction Operating Temperature
Storage Temperature
Value
41
- 0.3
- 200
Internally Limited
-6
+/- 10
+/- 10
4000
4000
5000
5000
6.25
77
Internally Limited
- 55 to 150
Unit
V
V
mA
A
A
mA
mA
V
V
V
V
W
mJ
擄C
擄C
V
ESD
P
tot
E
MAX
T
j
T
stg
(**) See application schematic at page 9
January 2003
1/20

VNQ830M13TR 產(chǎn)品屬性

  • VNQ830M View All Specifications

  • 1,000

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān)

  • -

  • 高端

  • 非反相

  • 4

  • 60 毫歐

  • -

  • 10.5A

  • 5.5 V ~ 36 V

  • -

  • 表面貼裝

  • 28-SOIC（0.295"，7.50mm 寬）

  • 28-SO

  • 帶卷 (TR)

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