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VNQ810M13TR Datasheet

  • VNQ810M13TR

  • QUAD CHANNEL HIGH SIDE DRIVER

  • 216.76KB

  • 21頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
M
VNQ810M
QUAD CHANNEL HIGH SIDE DRIVER
TYPE
VNQ810M
(*)
Per each channel
R
DS(on)
150 m鈩?(*)
I
OUT
0.6 A (*)
V
CC
36 V
CMOS COMPATIBLE INPUTS
s
OPEN DRAIN STATUS OUTPUTS
s
ON STATE OPEN LOAD DETECTION
s
OFF STATE OPEN LOAD DETECTION
s
SHORTED LOAD PROTECTION
s
UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
s
PROTECTION AGAINST LOSS OF GROUND
s
VERY LOW STAND-BY CURRENT
s
s
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE
REVERSE BATTERY PROTECTION (**)
SO-28
TUBE
VNQ810M
T&R
VNQ810M13TR
DESCRIPTION
The VNQ810M is a quad HSD formed by
assembling two VND810M chips in the same SO-
28 package. The VND810M is a monolithic device
made by using STMicroelectronics VIPower M0-3
Technology, intended for driving any kind of load
with one side connected to ground.
Active V
CC
pin voltage clamp protects the device
ABSOLUTE MAXIMUM RATING
Symbol
V
CC
- V
CC
- I
gnd
I
OUT
- I
OUT
I
IN
I
STAT
Parameter
against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protects the device against overload. The
current limitation threshold is aimed at detecting
the 21W/12V standard bulb as an overload fault.
The device detects open load condition both in on
and off state . Output shorted to V
CC
is detected
in the off state. Device automatically turns off in
case of ground pin disconnection.
Value
41
-0.3
-200
Internally Limited
-6
+/- 10
+/- 10
4000
4000
5000
5000
174
6.25
Internally Limited
-55 to 150
Rev. 1
1/21
Unit
V
V
mA
A
A
mA
mA
V
V
V
V
mJ
W
擄C
擄C
DC Supply Voltage
Reverse DC Supply Voltage
DC Reverse Ground Pin Current
DC Output Current
Reverse DC Output Current
DC Input Current
DC Status Current
Electrostatic Discharge (Human Body Model: R=1.5K鈩? C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
Maximum Switching Energy
(L=310mH; R
L
=0鈩? V
bat
=13.5V; T
jstart
=150潞C; I
L
=0.9A)
Power dissipation (per island) at T
lead
=25擄C
Junction Operating Temperature
Storage Temperature
V
ESD
E
MAX
P
tot
T
j
T
stg
(**) See application schematic at page 9
July 2004

VNQ810M13TR 產(chǎn)品屬性

  • VNQ810M View All Specifications

  • 1,000

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開(kāi)關(guān)

  • -

  • 高端

  • 非反相

  • 4

  • 150 毫歐

  • -

  • 900mA

  • 5.5 V ~ 36 V

  • -

  • 表面貼裝

  • 28-SOIC（0.295"，7.50mm 寬）

  • 28-SO

  • 帶卷 (TR)

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