鈮?/div>
50
碌s)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TA = 25擄C
Derate above 25擄C
Operating and Storage
Temperature Range
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, Tstg
Value
60
60
鹵
20
鹵
40
150
1000
400
3.2
鈥?55 to +150
mW
mW/擄C
擄C
Unit
Vdc
Vdc
Vdc
Vpk
mAdc
CASE 29鈥?4, STYLE 22
TO鈥?2 (TO鈥?26AA)
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16鈥?from case
for 10 seconds
Symbol
R
胃JA
TL
Max
312.5
300
Unit
擄C/W
擄C
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain鈥揝ource Breakdown Voltage
(VGS = 0, ID = 100
碌A(chǔ)dc)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125擄C)
Gate鈥揃ody Leakage Current, Forward
(VGSF = 30 Vdc, VDS = 0)
V(BR)DSS
IDSS
鈥?/div>
鈥?/div>
IGSSF
鈥?/div>
10
500
鈥?00
nAdc
60
鈥?/div>
Vdc
碌A(chǔ)dc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain鈥揝ource On鈥揜esistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125擄C)
1. Pulse Test: Pulse Width
VGS(th)
rDS(on)
鈥?/div>
鈥?/div>
7.5
13.5
0.6
2.5
Vdc
鈩?/div>
v
300
碌s,
Duty Cycle
v
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
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