V-Data
Synchronous DRAM
General Description
The VDS6632A4A are four-bank Synchronous
DRAMs organized as 524,288 words x 32 bits x 4
banks,
Synchronous design allows precise cycle control
with the use of system clock I/O transactions are
possible on every clock cycle.
Range of operating frequencies, programmable
burst length and programmable latencies allow the
same device to be useful for a variety of high
bandwidth high performance memory system
applications
VDS6632A4A
512K x 32 Bit x 4 Banks
Features
鈥EDEC
standard LVTTL 3.3V power supply
鈥RS
Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,3,8,& full page)
-Burst Type (sequential & Interleave)
鈥?
banks operation
鈥ll
inputs are sampled at the positive edge of
the system clock
鈥urst
Read single write operation
鈥uto
& Self refresh
鈥?096
refresh cycle
鈥QM
for masking
鈥ackage:86-pins
400 mil TSOP-Type II
Ordering Information.
Part No.
VDS6632A4A-5
VDS6632A4A-5.5
VDS6632A4A-6
Frequency
200Mhz
183Mhz
166Mhz
Interface
LVTTL
LVTTL
LVTTL
Package
400mil 86pin TSOPII
400mil 86pin TSOPII
400mil 86pin TSOPII
Pin Assignment
V
DD
D Q0
V
DD Q
D Q1
D Q2
V
SSQ
D Q3
D Q4
V
DD Q
DQ 5
DQ 6
V
SSQ
DQ 7
NC
V
DD
DQM 0
WE
CA S
RA S
CS
NC
BA0
BA1
A1 0/A P
A0
A1
A2
D QM 2
V
DD
NC
DQ 16
V
S SQ
DQ 17
DQ 18
V
DD Q
DQ 19
DQ 20
V
S SQ
DQ 21
DQ 22
V
DD Q
D Q 23
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
V
S S
DQ15
V
S SQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
S SQ
DQ10
DQ9
V
DD Q
DQ8
NC
V
S S
DQM 1
NC
NC
CLK
CKE
A9
A8
A7
A6
A5
A4
A3
DQM 3
V
S S
NC
DQ31
V
DD Q
DQ30
DQ29
V
SSQ
DQ28
DQ27
V
DD Q
DQ26
DQ25
V
SSQ
DQ24
V
S S
86-pin plastic TSOP II 400mil
Rev 1.0 April, 2001
1
1
2
3
4
5
6
7
8
