C-10
01/99
VCR11N
N-Channel Silicon Voltage Controlled Resistor JFET
樓
樓
樓
樓
Small Signal Attenuators
Filters
Amplifier Gain Control
Oscillator Amplitude Control
Absolute maximum ratings at T
A
= 25隆C.
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
鈥?15 V
10 mA
300 mW
2.4 mW/擄C
At 25擄C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Static Drain Source ON Resistance Ratio
VCR11N
Min
V
(BR)GSS
I
GSS
V
GS(OFF)
r
DS(MIN)
r
DS(MAX)
鈥?
.95
.95
鈥?25
鈥?0.2
鈥?12
1
1
Max
Unit
V
nA
V
Process NJ26
Test Conditions
I
G
= 鈥?1 碌A(chǔ), V
DS
= 脴V
V
GS
= 鈥?15V, V
DS
= 脴V
I
D
= 1 碌A(chǔ), V
DS
= 鈥?10V
V
DS
= 100 mV, r
DS1
= 200鈩?/div>
V
GS1
= V
GS2
, r
DS1
= 2 k鈩?/div>
鈩?/div>
pF
pF
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
r
ds(on)
C
dg
C
sg
70
200
7.5
7.5
V
GS
= 脴V, I
D
= 脴A
V
DG
= 10V, I
S
= 脴A
V
GS
= 10V, I
D
= 脴A
f = 1 kHz
f = 1 MHz
f = 1 MHz
TO脨71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source , 2 Drain 1, 3 Gate 1,
5 Source 2, 6 Drain 2, 7 Gate 2
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
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