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V54C316162VC-7 Datasheet

  • V54C316162VC-7

  • 200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMA...

  • 22頁(yè)

  • MOSEL

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V54C316162VC
200/183/166/143 MHz 3.3 VOLT, 2K REFRESH
ULTRA HIGH PERFORMANCE
1M X 16 SDRAM 2 BANKS X 512Kbit X 16
s
JEDEC Standard 3.3V Power Supply
s
The V54C316162VC is ideally suited for high
performance graphics peripheral applications
s
Single Pulsed RAS Interface
s
Programmable CAS Latency: 2, 3
s
All Inputs are sampled at the positive going edge
of clock
s
Programmable Wrap Sequence: Sequential or
Interleave
s
Programmable Burst Length: 1, 2, 4, 8 and Full
Page for Sequential and 1, 2, 4, 8 for Interleave
s
UDQM & LDQM for byte masking
s
Auto & Self Refresh
s
2K Refresh Cycles/32 ms
s
Burst Read with Single Write Operation
CILETIV LESOM
V54C316162VC
Clock Frequency (t
CK
)
Latency
Cycle Time (t
CK
)
Access Time (t
AC
)
-5
200
3
5
5
-55
183
3
5.5
5.3
-6
166
3
6
5.5
-7
143
3
7
5.5
Unit
MHz
clocks
ns
ns
Features
Description
The V54C316162VC is a 16,777,216 bits syn-
chronous high data rate DRAM organized as 2 x
524,288 words by 16 bits. The device is designed to
comply with JEDEC standards set for synchronous
DRAM products, both electrically and mechanically.
Synchronous design allows precise cycle control
with the system clock. The CAS latency, burst
length and burst sequence must be programmed
into device prior to access operation.
V54C316162VC Rev. 1.4 December 2001
1

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