UTC MPSH10
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC MPSH10 is desinged for using as VHF and
UHF oscillators and VHf Mixer in a tuner of a TV
receiver.
1
TO-92
1: EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Operating temperature range applies unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Total Power Dissipation(Ta=25擄C
)
Collector current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
RATING
30
25
3
250
50
150
-55 ~ +150
UNIT
V
V
V
mW
mA
擄C
擄C
ELECTRICAL CHARACTERISTICS
(Ta=25擄C,unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Collector-emitter on voltage
DC current gain
Output capacitace
Current gain bandwidth product
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
VCE(SAT)
VCE(ON)
hFE
Cob
fT
TEST CONDITIONS
Ic=100碌A(chǔ)
Ic=1mA
I
E
=10碌A(chǔ)
V
CB
=25V
V
EB
=2V
IC=4mA,IB=400碌A(chǔ)
VCE=10V,IC=4mA
VCE=10V,IC=4mA,f=100MHZ
VCE=10V,f=1MHZ
VCE=10V,IC=4mA,f=100MHZ
MIN
30
25
TYP
MAX
UNIT
V
V
V
nA
nA
mV
mV
pF
MHZ
3
100
100
500
950
60
0.7
650
UTC
UNISONIC TECHNOLOGIES CO. LTD
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