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UPD464518ALS1-A6 Datasheet

  • UPD464518ALS1-A6

  • x18 Fast Synchronous SRAM

  • 28頁

  • ETC

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DATA SHEET
碌
PD464518AL, 464536AL
4M-BIT Bi-CMOS SYNCHRONOUS FAST STATIC RAM
256K-WORD BY 18-BIT / 128K-WORD BY 36-BIT
LVTTL INTERFACE/REGISTER-LATCH/LATE WRITE
Description
The
碌
PD464518AL is a 262,144 words by 18 bits, and the
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PD464536AL is a 131,072 words by 36 bits
synchronous static RAM fabricated with advanced Bi-CMOS technology using N-channel memory cell.
This technology and unique peripheral circuits make the
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PD464518AL and
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PD464536AL a high-speed device.
The
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PD464518AL and
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PD464536AL are suitable for applications which require high-speed, low voltage, high-
density memory and wide bit configuration, such as cache and buffer memory.
These are packaged in a 119-pin plastic BGA (Ball Grid Array).
MOS INTEGRATED CIRCUIT
Features
鈥?/div>
Register to latch synchronous operation
鈥?/div>
LVTTL 3.3 V Input / Output levels
鈥?/div>
Fast clock access time : 5.5 ns / 182 MHz, 6.0 ns / 166 MHz, 7.0 ns / 143 MHz
鈥?/div>
Asynchronous output enable control : /G
鈥?/div>
Single differential clock inputs
鈥?/div>
Byte write control : /SBa (DQa1-9), /SBb (DQb1-9), /SBc (DQc1-9), /SBd (DQd1-9)
鈥?/div>
Common I/O using three-state outputs
鈥?/div>
Internally self-timed write cycle
鈥?/div>
Late write with 1 dead cycle between Read-Write
鈥?/div>
Boundary scan (JTAG) IEEE 1149.1 compatible
鈥?/div>
Single +3.3 V power supply
鈥?/div>
Sleep mode : ZZ(Enables sleep mode, active high)
Ordering Information
Part number
Access time
5.5 ns
6.0 ns
7.0 ns
5.5 ns
6.0 ns
7.0 ns
Clock frequency
182 MHz
166 MHz
143 MHz
182 MHz
166 MHz
143 MHz
Package
119-pin plastic BGA
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PD464518ALS1-A55
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PD464518ALS1-A6
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PD464518ALS1-A7
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PD464536ALS1-A55
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PD464536ALS1-A6
碌
PD464536ALS1-A7
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M13609EJ4V0DS00 (4th edition)
Date Published January 2001 NS CP(K)
Printed in Japan
The mark
鈥?/div>
shows major revised points.
漏
1999

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