PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
渭
PD46128953-X
128M-BIT CMOS MOBILE SPECIFIED RAM
4M-WORD BY 32-BIT
ADDRESS / DATA MULTIPLEXED
EXTENDED TEMPERATURE OPERATION
Description
The
渭
PD46128953-X is a high speed, low power, 134,217,728 bits (4,194,304 words by 32 bits) CMOS Mobile
Specified RAM featuring synchronous burst read and synchronous burst write function.
The
渭
PD46128953-X realizes high performance with the SDR interface, command and data inputs / outputs are
synchronized the rising edge of clock.
The
渭
PD46128953-X is fabricated with advanced CMOS technology using one-transistor memory cell.
Features
鈥?/div>
4,194,304 words by 32 bits organization
鈥?/div>
Low voltage operation: 1.7 to 2.0 V (1.85
鹵
0.15 V)
鈥?/div>
Operating ambient temperature: T
A
=
鈭?5
to
+85
擄C
鈥?/div>
Synchronous burst mode
Burst length
: 8 double words (Wrap)
Burst sequence
: Linear burst
Maximum clock frequency : 83 / 66 MHz
鈥?/div>
SDR (Single Data Rate) Architecture
One data transfers per one clock cycle
All inputs/outputs are synchronized with the positive edge of the clock
鈥?/div>
Write data mask (DM) for write operation
鈥?/div>
Output Enable: /OE pin
鈥?/div>
Chip Enable input: /CE1 pin
鈥?/div>
Standby Mode input: CE2 pin
鈥?/div>
Standby Mode 1: Normal standby (Memory cell data hold valid)
鈥?/div>
Standby Mode 2: Density of memory cell data hold is variable
渭
PD46128953
Clock
frequency
MHz
(MAX.)
-E12X
-E15X
Note
Operating
supply
voltage
V
1.7 to 2.0
Operating
ambient
temperature
擄C
鈭?5
to
+85
60
55
Supply current
At operating mA
(MAX.)
At standby
渭
A
(MAX.)
83
66
T.B.D.
Note
Under consideration
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M17506EJ1V1DS00 (1st edition)
Date Published September 2005 CP (K)
Printed in Japan
2005
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