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UPD444016G5-8-7JF Datasheet

  • UPD444016G5-8-7JF

  • 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT

  • 16頁(yè)

  • NEC   NEC

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DATA SHEET
MOS INTEGRATED CIRCUIT
碌
PD444016
4M-BIT CMOS FAST SRAM
256K-WORD BY 16-BIT
Description
The
碌
PD444016 is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.
Operating supply voltage is 5.0 V
鹵
0.5 V.
The
碌
PD444016 is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).
Features
鈥?/div>
262,144 words by 16 bits organization
鈥?/div>
Fast access time : 8, 10, 12 ns (MAX.)
鈥?/div>
Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
鈥?/div>
Output Enable input for easy application
鈥?/div>
Single +5.0 V power supply
Ordering Information
Part number
Package
Access time
ns (MAX.)
Supply current mA (MAX.)
At operating
220
200
190
220
200
190
At standby
10
碌
PD444016LE-8
碌
PD444016LE-10
碌
PD444016LE-12
碌
PD444016G5-8-7JF
碌
PD444016G5-10-7JF
碌
PD444016G5-12-7JF
44-pin plastic SOJ
(10.16 mm (400))
8
10
12
44-pin plastic TSOP (II)
(10.16 mm (400))
(Normal bent)
8
10
12
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14430EJ4V0DS00 (4th edition)
Date Published January 2001 NS CP(K)
Printed in Japan
The mark
鈥?/div>
shows major revised points.
漏
1999

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