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UPD444004LLE-A12 Datasheet

  • UPD444004LLE-A12

  • 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT

  • 100.12KB

  • 16頁

  • NEC   NEC

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DATA SHEET
MOS INTEGRATED CIRCUIT
碌
PD444004L
4M-BIT CMOS FAST SRAM
1M-WORD BY 4-BIT
Description
The
碌
PD444004L is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM.
Operating supply voltage is 3.3 V
鹵
0.3 V.
The
碌
PD444004L is packaged in a 32-pin PLASTIC SOJ.
Features
鈥?/div>
1,048,576 words by 4 bits organization
鈥?/div>
Fast access time : 8, 10, 12 ns (MAX.)
鈥?/div>
Output Enable input for easy application
鈥?/div>
Single +3.3 V power supply
Ordering Information
Part number
Package
Access time
ns (MAX.)
Supply current mA (MAX.)
At operating
180
160
150
At standby
5
碌
PD444004LLE-A8
碌
PD444004LLE-A10
碌
PD444004LLE-A12
32-pin PLASTIC SOJ
(10.16 mm (400))
8
10
12
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14427EJ4V0DS00 (4th edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark
shows major revised points.
漏
1999

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