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UPD444001LE-12 Datasheet

  • UPD444001LE-12

  • 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT

  • 143.98KB

  • 16頁

  • NEC   NEC

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DATA SHEET
MOS INTEGRATED CIRCUIT
碌
PD444001
4M-BIT CMOS FAST SRAM
4M-WORD BY 1-BIT
Description
The
碌
PD444001 is a high speed, low power, 4,194,304 bits (4,194,304 words by 1 bit) CMOS static RAM.
Operating supply voltage is 5.0 V
鹵
0.5 V.
The
碌
PD444001 is packaged in 32-pin PLASTIC SOJ.
Features
鈥?/div>
4,194,304 words by 1 bit organization
鈥?/div>
Fast access time : 10, 11, 12 ns (MAX.)
鈥?/div>
Output Enable input for easy application
鈥?/div>
Single +5.0 V power supply
Ordering Information
Part number
Package
Access time
ns (MAX.)
Supply current mA (MAX.)
At operating
170
160
150
At standby
10
碌
PD444001LE-10
碌
PD444001LE-11
碌
PD444001LE-12
32-pin PLASTIC SOJ
(10.16 mm (400))
10
11
12
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14947EJ4V0DS00 (4th edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark
shows major revised points.
漏
2000

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