Memory
Description
碌PD29F064115
64 Mb Flash Memory
The 64 Mb 碌PD29F064115 flash memory with page-read function is optimized for ultra-
low-power mobile applications such as cellular telephones, personal digital assistants
(PDAs) and other portable terminals.
Specifications
Organization
4 Mwords x 16 bits
Sector architecture
142 sectors (4 Kwords x 16 sectors + 32 Kwords x 126 sectors)
Bank architecture
4 banks (8 Mb + 24 Mb + 24 Mb + 8 Mb)
Power supply
V
CC
= 1.95 鹵0.15 V or 1.65 鹵0.15 V; V
CCQ
= 3.0 鹵0.3 V
Random access time
85 ns* / 90 ns / 100 ns; (*V
CC
= 1.95 鹵0.15 V)
Page access time
30 ns
48-pin TSOP Type I (12 mm x 20 mm)
Package
63-ball tape FBGA (11 mm x 8 mm)
85-ball tape FBGA
Features
鈥?/div>
V
CC
=1.65 V minimum (1.8 鹵0.15 V), one of the industry鈥檚 lowest operating voltages
鈥?High-speed page read access time of 30 ns for better performance
鈥?Dual operation with four bank architecture to enhance flexibility
鈥?/div>
Two 8 Mb banks with 4 Kwords x 8 boot sectors, combining conventional top- and
bottom-boot architectures in one product
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