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UPD29F032204ALGZ-B85TY-MJH Datasheet

  • UPD29F032204ALGZ-B85TY-MJH

  • EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC

  • 28頁(yè)

  • ETC

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DATA SHEET
碌
PD29F032204AL-Y
32M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY
4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE)
MOS INTEGRATED CIRCUIT
Description
The
碌
PD29F032204AL-Y is a flash memory organized of 33,554,432 bits and 71 sectors. Sectors of this memory
can be erased at a low voltage (2.7 to 3.3 V, 3.0 to 3.6 V) supplied from a single power source, or the contents of the
entire chip can be erased. Two modes of memory organization, BYTE mode (4,194,304 words
脳
8 bits) and WORD
mode (2,097,152 words
脳
16 bits), are selectable so that the memory can be programmed in byte or word units.
The
碌
PD29F032204AL-Y can be read while its contents are being erased or programmed. The memory cell is
divided into two banks. While sectors in one bank are being erased or programmed, data can be read from the other
bank thanks to the simultaneous execution architecture. The banks are 16M bits and 16M bits.
This flash memory comes in two types. The T type has a boot sector located at the highest address (sector) and the
B type has a boot sector at the lowest address (sector).
Because the
碌
PD29F032204AL-Y enables the boot sector to be erased, it is ideal for storing a boot program. In
addition, program code that controls the flash memory can be also stored, and the program code can be
programmed or erased without the need to load it into RAM. Eight small sectors for storing parameters are provided,
each of which can be erased in 8K bytes units.
Once a program or erase command sequence has been executed, an automatic program or automatic erase
function internally executes program or erase and verification automatically.
Because the
碌
PD29F032204AL-Y can be electrically erased or programmed by writing an instruction, data can be
reprogrammed on-board after the flash memory has been installed in a system, making it suitable for a wide range of
applications.
This flash memory is packed in a 48-pin PLASTIC TSOP (I) and 63-pin TAPE FBGA.
Features
鈥?/div>
Two bank organization enabling simultaneous execution of program / erase and read
鈥?/div>
Bank organization: 2 banks (16M bits + 16M bits)
鈥?/div>
Memory organization : 4,194,304 words
脳
8 bits (BYTE mode)
2,097,152 words
脳
16 bits (WORD mode)
鈥?/div>
Sector organization : 71 sectors (8K bytes / 4K words
脳
8 sectors, 64K bytes / 32K words
脳
63 sectors)
鈥?/div>
2 types of sector organization
鈥?/div>
T type : Boot sector allocated to the highest address (sector)
鈥?/div>
B type : Boot sector allocated to the lowest address (sector)
鈥?/div>
3-state output
鈥?/div>
Automatic program
鈥?/div>
Program suspend / resume
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M15516EJ4V0DS00 (4th edition)
Date Published January 2002 NS CP (K)
Printed in Japan
The mark
5
shows major revised points.
漏
2001

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