3 V, 900 MHz
Si MMIC AMPLIFIER
FEATURES
鈥?LOW VOLTAGE - LOW CURRENT:
5 mA at 3 V
鈥?LOW POWER CONSUMPTION:
15 mW TYP
鈥?SUPER SMALL PACKAGE
鈥?TAPE AND REEL PACKAGING OPTION AVAILABLE
Gain, G
S
(dB)
12
G
S
14
UPC2747T
NOISE FIGURE AND
GAIN vs. FREQUENCY
V
CC
= 3.0 V, I
CC
= 5 mA
4.5
4.0
DESCRIPTION
The UPC2747T is a Silicon Monolithic integrated circuit which
is manufactured using the NESAT III process. The NESAT III
process produces transistors with f
T
approaching 20 GHz.
This amplifier was designed for 900 MHz receivers in cellular
and cordless telephone applications. Operating on a 3 volt
supply (1.8 volt minimum) this IC is ideally suited for hand-
held, portable designs.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
10
NF
8
3.5
3.0
0
1000
2000
Frequency, f (MHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C, Z
L
= Z
S
= 50
鈩?
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
S
f
U1
P
SAT
NF
RL
IN
RL
OUT
ISOL
OIP
3
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
Small Signal Gain,
V
CC
= 3.0 V
V
CC
= 1.8 V
f = 900 MHz, V
CC
= 3.0 V
f = 900 MHz, V
CC
= 1.8 V
UNITS
mA
mA
dB
dB
GHz
GHz
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
擄C/W
擄C/W
11
7
35
MIN
3.8
9
1.5
-9.5
UPC2747T
TO6
TYP
5.0
3.0
12
5.5
1.8
1.8
-7
-14
3.3
5.2
14
11
10
13
40
34
-3
-3
-2
-10
620
230
4.5
MAX
7.0
14
Upper Limit Operating Frequency, V
CC
= 3.0 V
V
CC
= 1.8 V
Saturated Output Power,
Noise Figure,
Input Return Loss,
Output Return Loss,
Isolation,
f = 900 MHz, , V
CC
= 3.0 V
f = 900 MHz, V
CC
= 1.8 V
f = 900 MHz, V
CC
= 3.0 V
f = 900 MHz, V
CC
= 1.8 V
f = 900 MHz, V
CC
= 3.0 V
f = 900 MHz, V
CC
= 1.8 V
f = 900 MHz, V
CC
= 3.0 V
f = 900 mHz, V
CC
= 1.8 V
f = 900 MHz, V
CC
= 3.0 V
f = 900 MHz, V
CC
= 1.8 V
f1 = 900 MHz, f2 = 902 MHz, V
CC
= 3.0 V
f1 = 1000 MHz, f2 = 1010 MHz, V
CC
= 3.0 V
f1 = 900 MHz, f2 = 902 MHz, V
CC
= 1.8 V
SSB Output Third Order Intercept
, f1 = 500 MHz, f2 = 510 MHz, V
CC
= 3.0 V
R
TH (J-A)
Thermal Resistance (Junction to Ambient)
Free Air
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB
Note:
1.The gain at f
U
is 3 dB down from the gain at 100 MHz.
California Eastern Laboratories
Noise Figure, NF (dB)
1
2
3
4
5
