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UPA895TD-T3 Datasheet

  • UPA895TD-T3

  • NPN SILICON RF TWIN TRANSISTOR

  • 130.93KB

  • 10頁

  • NEC   NEC

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NEC's NPN SILICON RF
TWIN TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
LOW VOLTAGE, LOW CURRENT OPERATION
SMALL PACKAGE OUTLINE:
1.2 mm x 0.8 mm
LOW HEIGHT PROFILE:
Just 0.50 mm high
1
6
0.4
UPA895TD
OUTLINE DIMENSIONS
(Units in mm)
Package Outline TD
(TOP VIEW)
1.0鹵0.05
0.8
+0.07
-0.05
(Top View)
0.15鹵0.05
TWO LOW NOISE OSCILLATOR TRANSISTORS:
0.8
C1
1
Q1
6
B1
kP
NE851
IDEAL FOR 1-3 GHz OSCILLATORS
1.2
+0.07
-0.05
2
5
E1
0.4
2
Q2
5
E2
3
4
C2
3
4
B2
DESCRIPTION
NEC's UPA895TD contains two NE851 high frequency silicon
bipolar chips. The NE851 is an excellent oscillator chip, featur-
ing low 1/f noise and high immunity to pushing effects. NEC's
new ultra small TD package is ideal for all portable wireless
applications where reducing board space is a prime consider-
ation. Each transistor chip is independently mounted and
easily configured for oscillator/buffer amplifier and other
applications.
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
0.5鹵0.05
ORDERING INFORMATION
PART NUMBER
UPA895TD-T3
QUANTITY
10K Pcs./Reel
PACKAGING
Tape & Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 1 V, I
C
=5 mA, f = 2 GHz
GHz
pF
dB
dB
dB
3.0
4.5
UNITS
nA
nA
100
5.0
120
6.5
0.6
4.0
5.5
1.9
2.5
0.8
MIN
UPA895TD
TD
TYP
MAX
600
600
145
Q1 And Q2
|S
21
|S
21E
|
2E
|
2
Insertion Power GainIat V
CE
= 1 V, I
C
=15 mA, f = 2 GHz
NF
Noise Figure at V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Notes: 1. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
California Eastern Laboratories
0.125
+0.1
-0.05

UPA895TD-T3 產(chǎn)品屬性

  • NEC

  • Single

  • NPN

  • 0.1 A

  • TD

  • Reel

  • 145

  • SMD/SMT

  • 10000

UPA895TD-T3相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    UPA80C Data Sheet | Data Sheet[02/1982]
    ETC
  • 英文版
    UPA81C Data Sheet | Data Sheet[02/1982]
    ETC
  • 英文版
    UPA81C Data Sheet | Data Sheet[02/1982]
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC [NEC]
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI...
    NEC [NEC]
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 F...
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 F...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    TRANSISTOR ARRAY
    NEC [NEC]
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC [NEC]

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