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UPA880TS Datasheet

  • UPA880TS

  • NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PI...

  • 6頁

  • NEC   NEC

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PRELIMINARY DATA SHEET
NPN SiGe RF TWIN TRANSISTOR
碌
PA880TS
NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE)
FEATURES
鈥?2 different built-in transistors (NESG2046M33, NESG2107M33)
Q1: High gain SiGe transistor
f
T
= 18 GHz TYP.,
錚
21e
錚?/div>
2
= 13 dB TYP. @ V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
Q2: Low phase distortion SiGe transistor suited for OSC applications
f
T
= 10 GHz TYP.,
錚
21e
錚?/div>
2
= 9 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
鈥?6-pin super lead-less minimold (1007 package)
BUILT-IN TRANSISTORS
Q1
3-pin super lead-less minimold part No.
NESG2046M33
Q2
NESG2107M33
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
10 kpcs/reel
鈥?8 mm wide embossed taping
鈥?Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Supplying Form
碌
PA880TS
碌
PA880TS-T3
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10462EJ01V0DS (1st edition)
Date Published January 2004 CP(K)
Printed in Japan
錚?/div>
NEC Compound Semiconductor Devices 2004

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