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UPA862TD-T3 Datasheet

  • UPA862TD-T3

  • NECs NPN SILICON RF TWIN TRANSISTOR

  • 11頁(yè)

  • NEC   NEC

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NEC's NPN SILICON RF
TWIN TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
LOW VOLTAGE, LOW CURRENT OPERATION
SMALL PACKAGE OUTLINE:
1.2 mm x 0.8 mm
LOW HEIGHT PROFILE:
1
UPA862TD
OUTLINE DIMENSIONS
(Units in mm)
Package Outline TD
(TOP VIEW)
1.0鹵0.05
0.8
+0.07
-0.05
(Top View)
0.15鹵0.05
6
Just 0.50 mm high
0.4
TWO DIFFERENT DIE TYPES:
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
1.2
+0.07
-0.05
0.8
C1
1
Q1
6
B1
vY
2
5
E1
4
0.4
2
Q2
5
E2
鈥?/div>
IDEAL FOR 1-2 GHz OSCILLATORS
3
C2
3
4
B2
DESCRIPTION
NEC's UPA862TD contains one NE851 and one NE685 NPN
high frequency silicon bipolar chip. The NE851 is an excellent
oscillator chip, featuring low 1/f noise and high immunity to
pushing effects. The NE685 is an excellent buffer transistor,
featuring low noise and high gain. NEC's new ultra small TD
package is ideal for all portable wireless applications where
reducing board space is a prime consideration. Each transistor
chip is independently mounted and easily configured for oscil-
lator/buffer amplifier and other applications.
0.5鹵0.05
0.125
+0.1
-0.05
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 3 V, I
C
= 10 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=10 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 1 V, I
C
=5 mA, f = 2 GHz
GHz
pF
dB
dB
dB
3.0
4.5
GHz
pF
dB
dB
nA
nA
100
5.0
120
6.5
0.6
4.0
5.5
1.9
2.5
0.8
7
UNITS
nA
nA
75
10
110
12
0.4
8.5
1.5
2.5
600
600
145
0.7
MIN
UPA862TD
TD
TYP
MAX
100
100
150
Q1
f
T
Cre
|S
21E
|
2
NF
I
CBO
I
EBO
h
FE
Q2
f
T
Cre
|S
21E
|
2
|S
21
|S
21E
|
2E
|
2
Insertion Power GainIat V
CE
= 1 V, I
C
=15 mA, f = 2 GHz
NF
Noise Figure at V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Notes: 1. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
California Eastern Laboratories

UPA862TD-T3 產(chǎn)品屬性

  • CEL

  • Single

  • NPN

  • 0.03 A

  • 180 mW

  • TD

  • Reel

  • SMD/SMT

  • 10000

UPA862TD-T3相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠(chǎng)商
    下載
  • 英文版
    UPA80C Data Sheet | Data Sheet[02/1982]
    ETC
  • 英文版
    UPA81C Data Sheet | Data Sheet[02/1982]
    ETC
  • 英文版
    UPA81C Data Sheet | Data Sheet[02/1982]
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC [NEC]
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI...
    NEC [NEC]
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 F...
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 F...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    TRANSISTOR ARRAY
    NEC [NEC]
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC [NEC]

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