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UPA861TD-T3 Datasheet

  • UPA861TD-T3

  • NECs NPN SILICON RF TWIN TRANSISTOR

  • 10頁(yè)

  • NEC   NEC

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NEC's NPN SILICON
RF TWIN TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
LOW VOLTAGE, LOW CURRENT OPERATION
LOW CAPACITANCE FOR WIDE TUNING RANGE
SMALL PACKAGE OUTLINE:
1.2 mm x 0.8 mm
LOW HEIGHT PROFILE:
Just 0.50 mm high
0.4
1
UPA861TD
OUTLINE DIMENSIONS
(Units in mm)
Package Outline TD
(TOP VIEW)
1.0鹵0.05
0.8
+0.07
-0.05
(Top View)
0.15鹵0.05
6
C1
1
Q1
6
B1
vX
3
4
TWO DIFFERENT DIE TYPES:
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
IDEAL FOR >3 GHz OSCILLATORS
+0.07
-0.05
2
0.8
5
1.2
E1
0.4
2
Q2
5
E2
鈥?/div>
C2
3
4
B2
NEC's UPA861TD contains one NE894 and one NE687 NPN
high frequency silicon bipolar chip. The NE894 is an excellent
oscillator chip, featuring high fT and low current, low voltage
operation. The NE687 is an excellent buffer transistor, featur-
ing low noise and high gain. NEC's new ultra small TD package
is ideal for all portable wireless applications where reducing
board space is a prime consideration. Each transistor chip is
independently mounted and easily configured for oscillator/
buffer amplifier and other applications.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 1 V, I
C
= 10 mA
Gain Bandwidth at V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 0.5 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 1 V, I
C
=10 mA, f = 2 GHz
Noise Figure at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 1 V, I
C
= 5 mA
Gain Bandwidth at V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 0.5 V, I
E
= 0, f = 1 MHz
Insertion Power GainIat V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
Noise Figure at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz, Z
s
= Z
opt
GHz
pF
dB
dB
11.0
GHz
pF
dB
dB
nA
nA
50
17.0
75
20.0
0.22
13.0
1.4
2.5
0.30
7.0
UNITS
nA
nA
70
10.0
110
12.0
0.4
9.0
1.5
2.0
100
100
100
0.8
MIN
UPA861TD
TD
TYP
MAX
100
100
140
Q1
f
T
Cre
|S
21E
|
2
NF
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2E
|
2
NF
Notes: 1. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
Q2
California Eastern Laboratories
0.125
+0.1
-0.05
DESCRIPTION
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
0.5鹵0.05

UPA861TD-T3相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    UPA80C Data Sheet | Data Sheet[02/1982]
    ETC
  • 英文版
    UPA81C Data Sheet | Data Sheet[02/1982]
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  • 英文版
    UPA81C Data Sheet | Data Sheet[02/1982]
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  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
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  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
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  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
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  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    TRANSISTOR ARRAY
    NEC [NEC]
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC [NEC]

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