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UPA843TC-T1 Datasheet

  • UPA843TC-T1

  • NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLA...

  • 77.20KB

  • 12頁

  • NEC   NEC

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PRELIMINARY DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
碌
PA843TC
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
鈥?Flat-lead 6-pin thin-type ultra super minimold package
鈥?2 different built-in transistors (2SC5603, 2SC5600)
鈥?Low voltage operation
Q1: Built-in high gain transistor
f
T
= 13.5 GHz,
錚
21e
錚?/div>
2
= 10.0 dB @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
f
T
= 5.0 GHz,
錚
21e
錚?/div>
2
= 4.0 dB @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
BUILT-IN TRANSISTORS
Q1
3-pin thin-type ultra super minimold part No.
2SC5603
Q2
2SC5600
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
鈥?8 mm wide embossed taping
鈥?Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)
face the perforation side of the tape
碌
PA843TC
碌
PA843TC-T1
Remark
To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14679EJ2V0DS00 (2nd edition)
Date Published April 2000 NS CP(K)
Printed in Japan
The mark
鈥?/div>
shows major revised points.
漏
1999, 2000

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