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PRELIMINARY DATA SHEET

碌

PA836TF

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

Silicon Transistor

DESCRIPTION

The

碌

PA836TF has two different built-in transistors (Q1

and Q2) for low noise amplification in the VHF band to UHF

band.

PACKAGE DRAWINGS (Unit:mm)

2.10鹵0.1

1.25鹵0.1

0.22

鈭?.05

+0.1

1

Q2 : NF = 1.7 dB TYP. @f = 2 GHz, V

CE

= 1 V, I

C

= 3 mA

鈥?High gain

Q1 :

|S

21e

|

2

= 8.5 dB TYP. @f = 2 GHz, V

CE

= 3 V, I

C

= 10 mA

Q2 :

|S

21e

|

2

= 3.5 dB TYP. @f = 2 GHz, V

CE

= 1 V, I

C

= 3 mA

鈥?2 different transistors on-chip (2SC5193, 2SC4959)

鈥?6-pin thin-type small mini mold package

0.65

Q1 : NF = 1.5 dB TYP. @f = 2 GHz, V

CE

= 3 V, I

C

= 3 mA

1.30

鈥?Low noise

2.00鹵0.2

0.65

2

3

0.60鹵0.1

4

5

6

FEATURES

ON-CHIP TRANSISTORS

Q1

3-pin small mini mold part No.

2SC4959

Q2

2SC5193

PIN CONFIGURATION (Top View)

B1

E2

5

B2

4

Q2

2

E1

3

C2

The

碌

PA833TF features the Q1 and Q2 in inverted positions.

6

Q1

1

ORDERING INFORMATION

PART NUMBER

QUANTITY

Loose products

(50 pcs)

Taping products

(3 kpcs/reel)

PACKING STYLE

8-mm wide embossed tape.

Pin 6 (Q1 Base), pin 5 (Q2

Emitter), and pin 4 (Q2 Base)

face perforated side of tape.

C1

碌

PA836TF

碌

PA836TF-T1

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

Caution is required concerning excess input, such as from cstati

electricity becaus the high-frequency

,

e

process is used for this device.

The information in this document is subject to change without notice.

Document No. P12728EJ1V0DS00 (1st edition)

Date Published August 1997 N

Printed in Japan

0 to 0.1

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

漏

0.13鹵0.05

V47

0.45

1997

next

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