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DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

碌

PA835TC

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION

The

碌

PA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to

UHF band.

FEATURES

鈥?Low noise

Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, V

CE

= 3 V, I

C

= 3 mA

Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, V

CE

= 3 V, I

C

= 7 mA

鈥?High gain

Q1 :

|S

21e

|

2

= 8.5 dB TYP. @ f = 2 GHz, V

CE

= 3 V, I

C

= 10 mA

Q2 :

|S

21e

|

2

= 9.0 dB TYP. @ f = 1 GHz, V

CE

= 3 V, I

C

= 7 mA

鈥?Flat-lead 6-pin thin-type ultra super minimold package

鈥?Built-in 2 different transistors (2SC5010, 2SC5006)

BUILT-IN TRANSISTORS

Q1

3-pin ultra super minimold part No.

2SC5010

Q2

2SC5006

ORDERING INFORMATION

Part Number

Package

Flat-lead 6-pin

thin-type ultra

super minimold

Quantity

Loose products

(50 pcs)

Taping products

(3 kp/reel)

Supplying Form

8 mm wide embossed tape.

Pin 6 (Q1 Base), pin 5 (Q2 Emitter), pin 4 (Q2 Base) face to perforation

side of the tape.

碌

PA835TC

碌

PA835TC-T1

Remark

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

碌

PA835TC.)

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14555EJ1V0DS00 (1st edition)

Date Published November 1999 N CP(K)

Printed in Japan

漏

1999

next

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