PRELIMINARY DATA SHEET
SILICON TRANSISTOR
P
PA828TF
HIGH-FREQUENCY LOW-NOISE AMPLIFIER
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 6-PIN 2
u
2SC5184) THIN-TYPE SMALL MINI MOLD
FEATURES
鈥?Low noise
NF = 1.3 dB TYP. @ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
鈥?6-pin thin-type small mini mold package adopted
鈥?Built-in 2 transistors (2
u
2SC5184)
PACKAGE DRAWINGS (Unit: mm)
2.10鹵0.1
1.25鹵0.1
1.30
ORDERING INFORMATION
Part Number
Quantity
Loose products
(50 pcs)
Taping products
(3 kpcs/reel)
Packing Style
2.00鹵0.2
0.65
2
0.65
3
P
PA828TF
P
PA828TF-T1
0.60鹵0.1
Remark
If you require an evaluation sample, please contact
an NEC Sales Representative (Unit sample quantity
is 50 pcs).
PIN CONFIGURATION (Top View)
B1
Unit
V
V
V
mA
mW
ABSOLUTE MAXIMUM RATINGS (T
A
= 25qC)
q
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
Rating
5
3
2
30
90 in 1 element
180 in 2 elements
150
冒65
to +150
E2
5
6
Q1
1
C1
2
E1
0 to 0.1
B2
4
Q2
3
C2
Junction Temperature
Storage Temperature
T
j
T
stg
擄C
擄C
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Caution is required concerning excess input, such as from static electricity, due to the high-precision
fabrication processes used for this device.
The information in this document is subject to change without notice.
Document No. P12693EJ1V0DS00 (1st edition)
Date Published July 1997 N
Printed in Japan
漏
0.13鹵0.05
0.45
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2
Emitter), Pin 4 (Q2 Base) face to
perforation side of the tape.
4
5
0.22
+0.1
鈥?.05
R86
1
6
1997