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UPA826TF-T1 Datasheet

  • UPA826TF-T1

  • NPN SILICON EPITAXIAL TWIN TRANSISTOR

  • 42.67KB

  • 6頁

  • NEC   NEC

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PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA826TF
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
LOW NOISE AND HIGH GAIN
OPERABLE AT LOW VOLTAGE
SMALL FEEDBACK CAPACITANCE:
Cre = 0.4 pF TYP
SMALL PACKAGE STYLE:
2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package
OUTLINE DIMENSIONS
(Units in mm)
Package Outline TS06 (Top View)
2.1
鹵
0.1
1.25
鹵
0.1
0.65
2.0
鹵
0.2
1.3
1
6
0.22
- 0.05
(All Leads)
+0.10
2
5
DESCRIPTION
The UPA826TF has two built-in low-voltage transistors which
are designed for low-noise amplification in the VHF to UHF
band. The two die are chosen from adjacent locations on the
wafer. These features combined with the pin configuration
make this device ideal for balanced or mirrored applications.
This device is suitable for very low voltage/low current, and low
noise applications. The thinner package style allows for higher
density designs.
3
4
0.6
鹵
0.1
0.45
0 ~ 0.1
0.13
鹵
0.05
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Note:
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
NF
h
FE1/
h
FE2
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 3 V, I
C
= 10 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
h
FE
Ratio, V
CE
= 3 V, I
c
= 10 mA
h
FE1
= Smaller h
FE
value between Q1 and Q2
h
FE2
= Larger h
FE
value between Q1 and Q2
Notes: 1. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with
emitter connected to guard pin of capacitances meter.
GHz
pF
dB
dB
0.85
7
UNITS
碌A(chǔ)
碌A(chǔ)
75
110
12
0.4
8.5
1.5
1.0
2.5
0.7
MIN
UPA826TF
TS06
TYP
MAX
0.1
0.1
150
California Eastern Laboratories

UPA826TF-T1相關(guān)型號(hào)PDF文件下載

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  • 英文版
    TRANSISTOR ARRAY
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