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UPA826TC-T1 Datasheet

  • UPA826TC-T1

  • NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5...

  • 12頁

  • NEC   NEC

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DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
碌
PA826TC
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 2
脳
2SC5010)
FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD
FEATURES
鈥?Low noise and high gain
鈥?Operable at low voltage
鈥?Small feedback capacitance: C
re
= 0.4 pF TYP.
鈥?Flat-lead 6-pin thin-type ultra super minimold package
鈥?/div>
Built-in 2 transistors (2
脳
2SC5010)
ORDERING INFORMATION
Part Number
Package
Flat-lead 6-pin
thin-type ultra
super minimold
Quantity
Loose products
(50 pcs)
Taping products
(3 kp/reel)
Supplying Form
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation
side of the tape.
碌
PA826TC
碌
PA826TC-T1
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
碌
PA826TC. Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (T
A
= +25擄C)
擄
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
Note
Ratings
9
6
2
30
180 in 1 element
230 in 2 elements
150
鈭?5
to 150
Unit
V
V
V
mA
mW
Junction Temperature
Storage Temperature
T
j
T
stg
擄C
擄C
2
Note
Mounted on 1.08 cm
脳
1.0 mm glass epoxy substrate.
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14553EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
漏
1999

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    TRANSISTOR ARRAY
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