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UPA814T-T1-A Datasheet

  • UPA814T-T1-A

  • NPN SILICON HIGH FREQUENCY TRANSISTOR

  • 4頁

  • CEL   CEL

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NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
SMALL PACKAGE STYLE:
2 NE688 Die in a 2 mm x 1.25 mm package
LOW NOISE FIGURE:
NF = 1.5 dB TYP at 2 GHz
HIGH GAIN BANDWIDTH:
f
T
= 9 GHz
HIGH COLLECTOR CURRENT:
100 mA
0.65
2.0
0.2
1.3
2
1
UPA814T
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE S06
2.1
0.1
1.25
0.1
6
0.2 (All Leads)
5
DESCRIPTION
NEC's UPA814T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T
, low voltage bias and small size make this device suited for
various hand-held wireless applications.
3
4
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25擄C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
1 Die
2 Die
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
mW
擄C
擄C
RATINGS
9
6
2
100
110
200
150
-65 to +150
0.9
0.1
0.7
0.15
- 0.05
0 ~ 0.1
+0.10
T
J
T
STG
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE1
f
T
Cre
2
|S
21E
|
2
NF
h
FE1
/h
FE2
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain at V
CE
= 1 V, I
C
= 3 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance at V
CB
= 1 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=20 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
h
FE
Ratio: h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
GHz
pF
dB
dB
0.85
UNITS
碌A(chǔ)
碌A(chǔ)
80
110
9.0
0.75
6.5
1.5
0.85
MIN
UPA814T
S06
TYP
MAX
0.1
0.1
160
Notes: 1. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA814T-T1, 3K per reel.
California Eastern Laboratories

UPA814T-T1-A 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • RF 晶體管 (BJT)

  • -

  • 2 NPN(雙)

  • 6V

  • 9GHz

  • 1.5dB @ 2GHz

  • -

  • 200mW

  • 80 @ 3mA,1V

  • 100mA

  • 表面貼裝

  • 6-TSSOP,SC-88,SOT-363

  • 6-SMT

  • 帶卷 (TR)

UPA814T-T1-A相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    UPA80C Data Sheet | Data Sheet[02/1982]
    ETC
  • 英文版
    UPA81C Data Sheet | Data Sheet[02/1982]
    ETC
  • 英文版
    UPA81C Data Sheet | Data Sheet[02/1982]
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC [NEC]
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI...
    NEC [NEC]
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 F...
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 F...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    TRANSISTOR ARRAY
    NEC [NEC]
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC [NEC]

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