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DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

碌

PA814TC

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2

脳

2SC5195)

FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

鈥?Low voltage operation, low phase distortion

鈥?Low noise: NF = 1.5 dB TYP. @ V

CE

= 3 V, I

C

= 7 mA, f = 2 GHz

NF = 1.7 dB TYP. @ V

CE

= 1 V, I

C

= 3 mA, f = 2 GHz

鈥?Flat-lead 6-pin thin-type ultra super minimold package.

鈥?Built-in 2 transistors (2

脳

2SC5195)

ORDERING INFORMATION

Part Number

Package

Flat-lead 6-pin

thin-type ultra

super minimold

Quantity

Loose products

(50 pcs)

Supplying Form

Embossed tape 8 mm wide.

Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to

perforation side of the tape.

碌

PA814TC

碌

PA814TC-T1

Taping products

(3 kp/reel)

Remark

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

碌

PA814TC. Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (T

A

= +25

擄

C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

T

Note

Ratings

9

6

2

100

200 in 1 element

230 in 2 elements

150

鈥?5 to +150

Unit

V

V

V

mA

mW

Junction Temperature

Storage Temperature

T

j

T

stg

藲C

藲C

Note

Mounted on 1.08 cm

2

脳

1.0 mm glass epoxy substrate.

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability

and additional information.

Document No. P14551EJ1V0DS00 (1st edition)

Date Published November 1999 N CP(K)

Printed in Japan

漏

1999

next

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