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PRELIMINARY DATA SHEET

SILICON TRANSISTOR

碌

PA813T

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2

脳

2SC4570) SMALL MINI MOLD

碌

PA813T has built-in 2 transistors which were developed for UHF.

PACKAGE DRAWINGS

(Unit: mm)

2.1鹵0.1

1.25鹵0.1

FEATURES

鈥?High f

T

f

T

= 5.5 GHz TYP. (@V

CE

= 5 V, I

C

= 5 mA, f = 1 GHz)

0.65 0.65

2.0鹵0.2

C

ob

= 0.7 pF TYP. (@V

CB

= 5 V, I

E

= 0, f = 1 MHz)

鈥?A Surface Mounting Package Adopted

鈥?Built-in 2 Transistors (2

脳

2SC4570)

1.3

2

3

ORDERING INFORMATION

0.9鹵0.1

PART NUMBER

QUANTITY

Loose products

(50 PCS)

PACKING STYLE

Embossed tape 8 mm wide. Pin 6 (Q1

Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)

face to perforation side of the tape.

0.7

碌

PA813T-T1

Taping products

(3 KPCS/Reel)

Remark

If you require an evaluation sample, please contact an NEC Sales

Representative. (Unit sample quantity is 50 pcs.)

PIN CONFIGURATION (Top View)

ABSOLUTE MAXIMUM RATINGS (T

A

= 25

擄

C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

T

RATING

20

12

3

30

120 in 1 element

160 in 2 elements

Note

125

鈥?5 to +125

UNIT

V

V

6

Q

1

5

0 to 0.1

4

Q

2

1

2

3

V

mA

mW

Junction Temperature

Storage Temperature

T

j

T

stg

藲C

藲C

PIN CONNECTIONS

4. Emitter (Q2)

1. Collector (Q1)

5. Emitter (Q1)

2. Base (Q2)

6. Base (Q1)

3. Collector (Q2)

Note

90 mW must not be exceeded in 1 element.

The information in this document is subject to change without notice.

Document No. P11466EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

漏

0.15

鈥?

+0.1

碌

PA813T

4

5

0.2

鈥?

1

6

+0.1

鈥?Small Collector Capacitance

XY

1995

next

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