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UPA812T-T1 Datasheet

  • UPA812T-T1

  • HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRA...

  • 6頁(yè)

  • NEC   NEC

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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
碌
PA812T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2
脳
2SC4227) SMALL MINI MOLD
The
碌
PA812T has built-in 2 low-voltage transistors which are designed to
amplify low noise in the VHF band to the UHF band.
PACKAGE DRAWINGS
(Unit: mm)
2.1鹵0.1
1.25鹵0.1
FEATURES
鈥?Low Noise
NF = 1.4 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
0.65 0.65
鈥?High Gain
1.3
|S
21e
|
2
= 12 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
鈥?A Small Mini Mold Package Adopted
鈥?Built-in 2 Transistors (2
脳
2SC4227)
2.0鹵0.2
2
3
ORDERING INFORMATION
PART NUMBER
QUANTITY
Loose products
(50 PCS)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
0.9鹵0.1
碌
PA812T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
RATING
20
10
1.5
65
150 in 1 element
200 in 2 elements
Note
150
鈥?5 to +150
UNIT
V
V
V
mA
mW
6
Q
1
1
5
0 to 0.1
4
Q
2
2
3
PIN CONNECTIONS
4. Emitter (Q2)
1. Collector (Q1)
5. Emitter (Q1)
2. Base (Q2)
6. Base (Q1)
3. Collector (Q2)
Junction Temperature
Storage Temperature
T
j
T
stg
藲C
藲C
Note
110 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. P11465EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
漏
0.15
鈥?
+0.1
碌
PA812T
0.7
4
5
1995
0.2
鈥?
1
6
+0.1
XY

UPA812T-T1 產(chǎn)品屬性

  • NEC

  • Single

  • NPN

  • 0.065 A

  • 0.11 W

  • SO-6

  • Reel

  • SMD/SMT

  • 3000

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