UPA810TC-T1 Datasheet

IC型號：
UPA810TC-T1
PDF描述：
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
文件大?。?/label>
54.93KB
PDF頁數(shù)：
12頁
芯片廠家：
NEC

閱覽下載糾錯 0

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

碌

PA810TC

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2

脳

2SC5006)

FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION

The

碌

PA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band

to the UHF band.

FEATURES

鈥?Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, V

= 3 V, I

= 7 mA

鈥?High gain: |S

21e

= 9.0 dB TYP. @ f = 1 GHz, V

= 3 V, I

= 7 mA

鈥?Flat-lead 6-pin thin-type ultra super minimold

鈥?Built-in 2 transistors (2

脳

2SC5006)

ORDERING INFORMATION

Part Number

Package

Flat-lead 6-pin

thin-type ultra

super minimold

Quantity

Loose products

(50 pcs)

Supplying Form

Embossed tape 8 mm wide.

Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to

perforation side of the tape.

碌

PA810TC

碌

PA810TC-T1

Taping products

(3 kp/reel)

Remark

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

碌

PA810TC. Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (T

= +25

擄

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Symbol

CBO

CEO

EBO

Note

Ratings

100

200 in 1 element

230 in 2 elements

150

鈥?5 to +150

Unit

Junction Temperature

Storage Temperature

stg

藲C

Note

Mounted on 1.08 cm

脳

1.0 mm glass epoxy substrate.

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability

and additional information.

Document No. P14550EJ1V0DS00 (1st edition)

Date Published November 1999 N CP(K)

Printed in Japan

漏

1999

型號

版本

描述

廠商

下載
UPA80

英文版

UPA80C Data Sheet | Data Sheet[02/1982]

ETC

UPA80
UPA81

英文版

UPA81C Data Sheet | Data Sheet[02/1982]

ETC

UPA81
UPA81

英文版

UPA81C Data Sheet | Data Sheet[02/1982]

UPA81
UPA801

英文版

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...

UPA801
UPA801

英文版

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...

NEC [NEC]

UPA801
UPA803

英文版

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI...

NEC [NEC]

UPA803
UPA804

英文版

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 F...

UPA804
UPA804

英文版

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 F...

NEC [NEC]

UPA804
UPA805

英文版

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...

UPA805
UPA805

英文版

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...

NEC [NEC]

UPA805
UPA806

英文版

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...

UPA806
UPA806

英文版

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...

NEC [NEC]

UPA806
UPA807

英文版

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...

UPA807
UPA807

英文版

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...

NEC [NEC]

UPA807
UPA808

英文版

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...

NEC [NEC]

UPA808
UPA809

英文版

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...

UPA809
UPA809

英文版

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...

NEC [NEC]

UPA809
UPA80C

英文版

TRANSISTOR ARRAY

NEC [NEC]

UPA80C
UPA810

英文版

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...

UPA810
UPA810

英文版

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...

NEC [NEC]

UPA810

UPA810TC-T1 Datasheet

PDF預(yù)覽

UPA810TC-T1相關(guān)型號PDF文件下載

您可能感興趣的PDF文件資料

熱門IC型號推薦

UPA810TC-T1 Datasheet

PDF預(yù)覽

UPA810TC-T1相關(guān)型號PDF文件下載

您可能感興趣的PDF文件資料

熱門IC型號推薦

建議反饋

PDF糾錯X