UPA809T-T1 Datasheet

IC型號：
UPA809T-T1
PDF描述：
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
文件大?。?/label>
66.36KB
PDF頁數(shù)：
10頁
芯片廠家：
NEC

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PRELIMINARY DATA SHEET

SILICON TRANSISTOR

碌

PA809T

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ELEMENTS) MINI MOLD

FEATURES

鈥?Low Voltage Operation, Low Phase Distortion

鈥?Low Noise

NF = 1.5 dB TYP. @V

= 3 V, I

= 7 mA, f = 2 GHz

NF = 1.7 dB TYP. @V

= 1 V, I

= 3 mA, f = 2 GHz

鈥?Large Absolute Maximum Collector Current

PACKAGE DRAWINGS

(Unit: mm)

2.1鹵0.1

1.25鹵0.1

0.65 0.65

1.3

= 100 mA

鈥?A Mini Mold Package Adopted

鈥?Built-in 2 Transistors (2

脳

2SC5193)

2.0鹵0.2

0.9鹵0.1

ORDERING INFORMATION

PART NUMBER

QUANTITY

Loose products

(50 PCS)

PACKING STYLE

Embossed tape 8 mm wide. Pin 6 (Q1

Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)

face to perforation side of the tape.

0.7

碌

PA809T

PIN CONFIGURATION (Top View)

碌

PA809T-T1

Taping products

(3 KPCS/Reel)

Remark

If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

0~0.1

ABSOLUTE MAXIMUM RATINGS (T

= 25

擄C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

SYMBOL

CBO

CEO

EBO

RATING

100

150 in 1 element

200 in 2 elements

Note

150

鈥?5 to +150

UNIT

PIN CONNECTIONS

4. Emitter (Q2)

1. Collector (Q1)

5. Base (Q2)

2. Emitter (Q1)

6. Base (Q1)

3. Collector (Q2)

Junction Temperature

Storage Temperature

stg

藲C

Note

110 mW must not be exceeded in 1 element.

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

The information in this document is subject to change without notice.

Document No. ID-3643

(O.D. No. ID-9150)

Date Published April 1995 P

Printed in Japan

漏

0.15

鈥?

+0.1

0.2

鈥?

+0.1

X Y

1995

型號

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