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PRELIMINARY DATA SHEET

SILICON TRANSISTOR

碌

PA806T

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ELEMENTS) MINI MOLD

FEATURES

鈥?Low Noise, High Gain

鈥?Operable at Low Voltage

鈥?Small Feed-back Capacitance

C

re

= 0.4 pF TYP.

鈥?Built-in 2 Transistors (2

脳

2SC4959)

PACKAGE DRAWINGS

(Unit: mm)

2.1鹵0.1

1.25鹵0.1

0.65 0.65

2.0鹵0.2

1.3

2

ORDERING INFORMATION

PART NUMBER

QUANTITY

Loose products

(50 PCS)

PACKING STYLE

Embossed tape 8 mm wide. Pin 6 (Q1

Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)

face to perforation side of the tape.

3

0.9鹵0.1

碌

PA806T

0.7

4

5

碌

PA806T-T1

Taping products

(3 KPCS/Reel)

Remark

If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

PIN CONFIGURATION (Top View)

ABSOLUTE MAXIMUM RATINGS (T

A

= 25

擄C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

T

RATING

9

6

2

30

150 in 1 element

200 in 2 elements

Note

150

鈥?5 to +150

UNIT

V

V

V

mA

mW

6

Q

1

5

0~0.1

4

Q

2

1

2

3

PIN CONNECTIONS

4. Emitter (Q2)

1. Collector (Q1)

5. Base (Q2)

2. Emitter (Q1)

6. Base (Q1)

3. Collector (Q2)

Junction Temperature

Storage Temperature

T

j

T

stg

藲C

藲C

Note

110 mW must not be exceeded in 1 element.

The information in this document is subject to change without notice.

Document No. ID-3640

(O.D. No. ID-9147)

Date Published April 1995 P

Printed in Japan

漏

0.15

鈥?

+0.1

0.2

鈥?

1

6

+0.1

X Y

1995

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