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UPA622TT-E2-A Datasheet

  • UPA622TT-E2-A

  • N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

  • 7頁(yè)

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA622TT
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
碌
PA622TT is a switching device which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
2.0 鹵0.2
0.25 鹵0.1
2.1 鹵0.1
6
5
4
1.6
FEATURES
鈥?/div>
4.0 V drive available
鈥?/div>
Low on-state resistance
R
DS(on)1
= 82 m鈩?MAX. (V
GS
= 10 V, I
D
= 1.5 A)
R
DS(on)2
= 120 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 1.0 A)
R
DS(on)3
= 139 m鈩?MAX. (V
GS
= 4.0 V, I
D
= 1.0 A)
0 to 0.05
1
2
3
0.65
0.65
S
0.15
鈭?.05
+0.1
0.8 MAX.
ORDERING INFORMATION
PART NUMBER
PACKAGE
6 pin WSOF (1620)
0.4 鹵0.1
0.05 S
碌
PA622TT-E1-A
碌
PA622TT-E2-A
1, 2, 5, 6: Drain
3
: Gate
4
: Source
Remark
"-A" indicates Pb-free (This product does not contain Pb
in external electrode and other parts.).
"-E1" or "-E2" indicates the unit orientation.
(8 mm embossed carrier tape, 3000 pcs/reel)
Marking: WC
0.2
鈭?.05
+0.1
0.1 M S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
GSS
鹵20
Gate to Source Voltage (V
DS
= 0 V)
Note1
Drain Current (DC)
I
D(DC)
鹵3.0
Note2
Drain Current (pulse)
I
D(pulse)
鹵12
0.2
Total Power Dissipation
P
T1
Note1
Total Power Dissipation
P
T2
1.3
150
Channel Temperature
T
ch
鈥?5 to +150
Storage Temperature
T
stg
2
Notes 1.
Mounted on FR-4 board of 5000 mm x 1.1 mm, t
鈮?/div>
5 sec.
2.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
V
V
A
A
W
W
擄C
擄C
EQUIVALENT CIRCUIT
Drain
Gate
Gate
Protection
Diode
Body
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16113EJ2V0DS00 (2nd edition)
Date Published May 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002

UPA622TT-E2-A 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門(mén)

  • 30V

  • -

  • 82 毫歐 @ 1.5A，10V

  • 2.5V @ 1mA

  • 3.8nC @ 10V

  • 155pF @ 10V

  • 200mW

  • 表面貼裝

  • 6-WSOF

  • 6-WSOF

  • 帶卷 (TR)

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