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UPA1902TE Datasheet

  • UPA1902TE

  • N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

  • 6頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA1902
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
碌
PA1902 is a switching device, which can be driven
directly by a 4.5 V power source.
This
碌
PA1902 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power management switch of portable machine and so on.
2.8 鹵0.2
PACKAGE DRAWING (Unit: mm)
0.32
+0.1
鈥?.05
0.65
鈥?.15
+0.1
0.16
+0.1
鈥?.06
6
1
5
2
4
0 to 0.1
FEATURES
鈥?/div>
4.5 V drive available
鈥?/div>
Low on-state resistance
R
DS(on)1
= 17 m鈩?TYP. (V
GS
= 10 V, I
D
= 3.5 A)
R
DS(on)2
= 22 m鈩?TYP. (V
GS
= 4.5 V, I
D
= 3.5 A)
1.5
3
0.65
0.9 to 1.1
0.4
0.95
0.95
1.9
2.9 鹵0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-95 (Mini Mold Thin Type)
碌
PA1902TE
Marking: TY
1, 2, 5, 6: Drain
3
: Gate
4
: Source
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Drain Current (pulse)
Total Power Dissipation
Note2
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
鹵
20
鹵
7.0
鹵
28
0.2
2.0
150
鈭?5
to +150
V
V
A
A
W
W
擄C
擄C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2.
Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t
鈮?/div>
5 sec.
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge. (It does not have built-in G-S protection diode.)
When this product actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16634EJ1V0DS00 (1st edition)
Date Published October 2003 NS CP(K)
Printed in Japan
2003

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