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UPA1806GR-9JG Datasheet

  • UPA1806GR-9JG

  • N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

  • 67.21KB

  • 6頁(yè)

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA1806
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
碌
PA1806 is a switching device, which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as DC/DC converters and power
management of notebook computers and so on.
8
PACKAGE DRAWING (Unit: mm)
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
1.2 MAX.
1.0 鹵0.05
0.25
3擄
+5擄
鈥?擄
0.1 鹵0.05
0.5
0.6
+0.15
鈥?.1
FEATURES
鈥?/div>
4.0 V drive available
鈥?/div>
Low on-state resistance
R
DS(on)1
= 8.5 m鈩?MAX. (V
GS
= 10 V, I
D
= 6.0 A)
R
DS(on)2
= 11.5 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 6.0 A)
R
DS(on)3
= 13 m鈩?MAX. (V
GS
= 4.0 V, I
D
= 6.0 A)
鈥?/div>
Built-in G-S protection diode against ESD
1
4
0.145 鹵0.055
3.15 鹵0.15
3.0 鹵0.1
6.4 鹵0.2
4.4 鹵0.1
1.0 鹵0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
0.65
0.8 MAX.
0.1
碌
PA1806GR-9JG
Power TSSOP8
0.27
+0.03
鈥?.08
0.10 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25擄C)
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUIT
30
鹵20
鹵13
鹵52
2.0
150
鈭?5
to +150
V
V
A
A
W
擄C
擄C
Gate
Protection
Diode
Source
Gate
Body
Diode
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16248EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
漏
2002

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