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UPA1770G Datasheet

  • UPA1770G

  • SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE

  • 68.41KB

  • 8頁(yè)

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA1770
SWITCHING
DUAL P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The
碌
PA1770 is a P-channel MOS Field Effect
Transistor designed for power management
applications of portable machines.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
碌
PA1770G
FEATURES
鈥?/div>
Dual chip type
鈥?/div>
Low on-resistance
R
DS(on)1
= 37 m鈩?MAX. (V
GS
= 鈥?.5 V, I
D
= 鈥?.0 A)
R
DS(on)2
= 39 m鈩?MAX. (V
GS
= 鈥?.0 V, I
D
= 鈥?.0 A)
R
DS(on)3
= 59 m鈩?MAX. (V
GS
= 鈥?.5 V, I
D
= 鈥?.0 A)
鈥?/div>
Low input capacitance
C
iss
= 1300 pF TYP.
鈥?/div>
Built-in G-S protection diode
鈥?/div>
Small and surface mount package (Power SOP8)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C, All terminals are connected.)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
Note2
Note3
Note3
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
P
T
P
T
T
ch
T
stg
鈥?0
V
V
A
A
W
W
W
W
擄C
擄C
!
12
!
6.0
!
24
0.40
0.75
1.7
2.0
150
鈥?5 to +150
Total Power Dissipation (1 unit)
Total Power Dissipation (2 unit)
5
5
Total Power Dissipation (1 unit)
Total Power Dissipation (2 unit)
Channel Temperature
Storage Temperature
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
2.
Mounted on FR4 Board of 1600 mm x 1.6 mm, Drain Pad size : 4.5 mm x 35
碌
m, T
A
= 25擄C
2
2
5
3.
Mounted on ceramic substrate of 1200 mm x 2.2 mm, T
A
= 25擄C
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14055EJ1V0DS00 (1st edition)
Date Published November 1999 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
漏
1999

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