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UPA1758G Datasheet

  • UPA1758G

  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA1758
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of
notebook computers, and Li-ion battery application.
FEATURES
鈥?/div>
Dual MOS FET chips in small package
鈥?/div>
2.5 V gate drive type low on-state resistance
R
DS(on)1
= 30 m鈩?(MAX.) (V
GS
= 4.5 V, I
D
= 3.0 A)
R
DS(on)2
= 40 m鈩?(MAX.) (V
GS
= 2.5 V, I
D
= 3.0 A)
鈥?/div>
Low C
iss
: C
iss
= 1100 pF (TYP.)
鈥?/div>
Built-in G-S protection diode
鈥?/div>
Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit : mm)
8
5
1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
1
4
5.37 Max.
+0.10
鈥?.05
6.0 鹵0.3
4.4
0.8
0.15
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
1.8 Max.
1.44
0.05 Min.
0.5 鹵0.2
0.10
1.27
0.40
0.78 Max.
0.12 M
碌
PA1758G
+0.10
鈥?.05
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 擄C)
Drain to Source Voltage (V
GS
= 0)
Gate to Source Voltage (V
DS
= 0)
Drain Current (DC)
Drain Current (Pulse)
Note1
Note2
Note2
EQUIVALENT CIRCUIT
30
鹵12.0
鹵6.0
鹵24
1.7
2.0
150
鈥?5 to + 150
V
V
A
A
W
W
擄C
擄C
Gate
Body
Diode
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
Total Power Dissipation (1 unit)
Total Power Dissipation (2 unit)
Channel Temperature
Storage Temperature
Gate
Protection
Diode
Source
Notes 1.
PW
鈮?/div>
10
碌
s, Duty cycle
鈮?/div>
1 %
2.
Mounted on ceramic substrate of 2000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
2
The information in this document is subject to change without notice.
Document No.
D12911EJ1V0DS00 (1st edition)
Date Published October 1998 NS CP(K)
Printed in Japan
漏
1998

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