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UPA1757G Datasheet

  • UPA1757G

  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA1757
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Description
This product is Dual N-Channel MOS Field Effect Transistor
designed for power management application of
notebook computers, and Li-ion battery application.
8
Package Drawing (Unit : mm)
5
1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
Features
鈥?/div>
Dual MOS FET chips in small package
鈥?/div>
2.5 V gate drive type and low on-resistance
R
DS(on)1
= 23 m鈩?/div>
(MAX.)
(V
GS
= 4.5 V, I
D
= 3.5 A)
1.44
R
DS(on)2
= 32 m鈩?/div>
(MAX.)
(V
GS
= 2.5 V, I
D
= 3.5 A)
1.8 Max.
1
5.37 Max.
4
6.0 鹵0.3
4.4
+0.10
鈥?.05
鈥?/div>
Low
0.8
C
iss
C
iss
= 750 pF Typ.
0.05 Min.
鈥?/div>
Small and surface mount package
(Power SOP8)
0.15
鈥?/div>
Built-in G-S protection diode
0.5 鹵0.2
0.10
1.27
0.40
0.78 Max.
0.12 M
+0.10
鈥?.05
Ordering information
Part Number
Package
Power SOP8
碌
PA1757G
Absolute Maximum Ratings (T
A
= 25 擄C)
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current (pulse)
Note1
Note2
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
20
鹵12.0
鹵7.0
鹵28
1.7
2.0
150
鈭?5
to +150
2
V
V
A
A
W
W
擄C
擄C
Drain
Total power dissipation (1 unit)
Total power dissipation (2 unit)
Channel temperature
Storage temperature
Gate
Body
Diode
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
2.
T
A
= 25 擄C, Mounted on ceramic substrate of 2000 mm x 1.1 mm
Gate
Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may
be applied to this device.
The information in this document is subject to change without notice.
Document No. D12910EJ2V0DS00 (2nd edition)
Date Published September 1998 NS CP (K)
Printed in Japan
漏
1998

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